Stable MoOx Based Heterocontacts for p-Type Crystalline Silicon Solar Cells Achieving 20% Efficiency

Crystalline silicon heterojunction solar cells based on hole-selective MoOX contacts provide obvious merits in terms of the decent passivation and carrier selectivity but face the challenge of long-term stability. With the aim to improve the performance and stability of solar cells with full area MoOX/metal contacts, a SiOX tunneling layer on silicon surface is intentionally formed by UV/O3 treatment and an indium tin oxide (ITO) film is sputtered as a high-work-function electrode. Before ITO sputtering, an ultrathin V2OX capping layer is introduced to efficiently prevent MoOX film from air exposure and the damage by sputtering bombardment. The insertion of SiOX, V2OX, and ITO keeps the work function of MoOX at a high level, which improves the hole selectivity as well as the stability of the contact. The p-Si/SiOX/MoOX/V2OX/ITO/Ag solar cell demonstrates an efficiency of 20.0% with improved stability, which is the highest value for MoOX heterocontacts class on p-type silicon to date.

Shanghai Advanced Research Institute (SARI), and many more

Shuangying Cao and Jingye Li and Juan Zhang and Yinyue Lin and Linfeng Lu and Jilei Wang and Min Yin and Liyou Yang and Xiaoyuan Chen and Dongdong Li

Advanced Functional Materials

MoO X hole-selective contact,V 2O X capping layer,oxygen vacancy,p-type silicon solar cell,performance stability

2020

12

10.1002/adfm.202004367

1616-301X

49

2004367

Wiley-VCH Verlag

30