Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers

Silicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the optoelectronic properties of these contacts can enable higher device efficiency, thus further consolidating the commercial potential of SHJ technology. Here we increase the efficiency of back junction SHJ solar cells with improved back contacts consisting of p-type doped nanocrystalline silicon and a transparent conductive oxide with a low sheet resistance. The electrical properties of the hole-selective contact are analysed and compared with a p-type doped amorphous silicon contact. We demonstrate improvement in the charge carrier transport and a low contact resistivity (<5 mΩ cm2). Eventually, we report a series of certified power conversion efficiencies of up to 26.81% and fill factors up to 86.59% on industry-grade silicon wafers (274 cm2, M6 size). Improvements in the power conversion efficiency of silicon heterojunction solar cells would consolidate their potential for commercialization. Now, Lin et al. demonstrate 26.81% efficiency devices using a p-doped nanocrystalline silicon and low-sheet-resistance transparent conductive oxide contact layer.

Hao Lin and Miao Yang and Xiaoning Ru and Genshun Wang and Shi Yin and Fuguo Peng and Chengjian Hong and Minghao Qu and Junxiong Lu and Liang Fang and Can Han and Paul Procel and Olindo Isabella and Pingqi Gao and Zhenguo Li and Xixiang Xu

Nature Energy 2023 8:8

Materials for energy and catalysis,Solar cells

2023

5

10.1038/s41560-023-01255-2

2058-7546

8

789-799

Nature Publishing Group

8